Observation of the fractional quantum Hall effect in GaAs-(Ga,A1)As quantum well structures
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چکیده
منابع مشابه
Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, as well as in smaller QDs. Also, it is proved that conduction and valence band-edges and electron-hole levels are size dependent; larger QD sizes appeared to result in the lower recombination...
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